{"id":141,"date":"2024-06-06T17:29:23","date_gmt":"2024-06-06T09:29:23","guid":{"rendered":"https:\/\/www.bihec.com\/pndetector\/?p=141"},"modified":"2024-06-06T17:29:23","modified_gmt":"2024-06-06T09:29:23","slug":"%e7%a1%85%e6%bc%82%e7%a7%bb%e6%8e%a2%e6%b5%8b%e5%99%a8silicon-drift-detector-%ef%bc%88sdd%ef%bc%89%e7%9a%84%e5%b7%a5%e4%bd%9c%e5%8e%9f%e7%90%86","status":"publish","type":"post","link":"https:\/\/www.bihec.com\/pndetector\/%e7%a1%85%e6%bc%82%e7%a7%bb%e6%8e%a2%e6%b5%8b%e5%99%a8silicon-drift-detector-%ef%bc%88sdd%ef%bc%89%e7%9a%84%e5%b7%a5%e4%bd%9c%e5%8e%9f%e7%90%86\/","title":{"rendered":"\u7845\u6f02\u79fb\u63a2\u6d4b\u5668Silicon Drift Detector \uff08SDD\uff09\u7684\u5de5\u4f5c\u539f\u7406"},"content":{"rendered":"

\u7845\u6f02\u79fb\u63a2\u6d4b\u5668<\/a>\uff08SDD<\/a>\uff09\u7684\u5de5\u4f5c\u539f\u7406<\/p>\n

The working principle of the Silicon Drift Detector<\/a> (SDD) is based on the concept of sideward depletion invented by Pavel Rehak and Emilio Gatti in 1983. It allows the depletion of a large volume of high-resistivity silicon material by a small anode receiving a minimum signal capacitance. By that, the SDD overcomes the major problem of a classical p-i-n diode detector where the input capacitance is direct proportional to the active area. Below figure\u00a0 shows a schematic view of the SDD in its standard configuration :<\/p>\n

\u7845\u6f02\u79fb\u63a2\u6d4b\u5668\uff08SDD\uff09\u7684\u5de5\u4f5c\u539f\u7406\u57fa\u4e8ePavel Rehak\u548cEmilio Gatti\u4e8e1983\u5e74\u53d1\u660e\u7684\u4fa7\u5411\u8017\u5c3d\u6982\u5ff5\u3002\u5b83\u5141\u8bb8\u901a\u8fc7\u63a5\u6536\u6700\u5c0f\u4fe1\u53f7\u7535\u5bb9\u7684\u5c0f\u9633\u6781\u6765\u8017\u5c3d\u5927\u4f53\u79ef\u7684\u9ad8\u7535\u963b\u7387\u7845\u6750\u6599\u3002\u901a\u8fc7\u8fd9\u4e00\u70b9\uff0cSDD\u514b\u670d\u4e86\u7ecf\u5178p-i-n\u4e8c\u6781\u7ba1\u68c0\u6d4b\u5668\u7684\u4e3b\u8981\u95ee\u9898\uff0c\u5176\u4e2d\u8f93\u5165\u7535\u5bb9\u4e0e\u6709\u6e90\u9762\u79ef\u6210\u6b63\u6bd4\u3002\u4e0b\u56fe\u663e\u793a\u4e86\u6807\u51c6\u914d\u7f6e\u4e0bSDD\u7684\u793a\u610f\u56fe\u3002<\/p>\n

\"\"<\/p>\n

While the back contact is made up by a homogeneous, shallow p+n junction on the side where the incoming radiation enters the detector, the opposite side is characterized by a structure of circular p+ drift rings and eventually an integrated first FET for on-chip amplification. By applying a negative voltage on the radiation entrance window and an increasingly negative voltage on the drift rings, a potential field distribution is created such that the electrons generated by the ionizing radiation drift towards the small sized collecting anode situated in the center of the device. In the case of an integrated FET, the signal is directly amplified without adding any additional noise or microphony problems by bond wires.<\/p>\n

\u867d\u7136\u80cc\u63a5\u89e6\u7531\u5165\u5c04\u8f90\u5c04\u8fdb\u5165\u63a2\u6d4b\u5668\u4e00\u4fa7\u7684\u5747\u5300\u6d45p+n\u7ed3\u7ec4\u6210\uff0c\u4f46\u76f8\u53cd\u4e00\u4fa7\u7684\u7279\u5f81\u662f\u5706\u5f62p+\u6f02\u79fb\u73af\u7684\u7ed3\u6784\uff0c\u4ee5\u53ca\u6700\u7ec8\u7528\u4e8e\u7247\u4e0a\u653e\u5927\u7684\u96c6\u6210\u7b2c\u4e00FET\u3002\u901a\u8fc7\u5728\u8f90\u5c04\u5165\u5c04\u7a97\u4e0a\u65bd\u52a0\u8d1f\u7535\u538b\u5e76\u5728\u6f02\u79fb\u73af\u4e0a\u65bd\u52a0\u8d8a\u6765\u8d8a\u8d1f\u7684\u7535\u538b\uff0c\u4ea7\u751f\u4e86\u7535\u52bf\u573a\u5206\u5e03\uff0c\u4f7f\u5f97\u7531\u7535\u79bb\u8f90\u5c04\u4ea7\u751f\u7684\u7535\u5b50\u5411\u4f4d\u4e8e\u5668\u4ef6\u4e2d\u5fc3\u7684\u5c0f\u5c3a\u5bf8\u6536\u96c6\u9633\u6781\u6f02\u79fb\u3002\u5728\u96c6\u6210FET\u7684\u60c5\u51b5\u4e0b\uff0c\u4fe1\u53f7\u88ab\u76f4\u63a5\u653e\u5927\uff0c\u800c\u4e0d\u6dfb\u52a0\u4efb\u4f55\u989d\u5916\u7684\u566a\u58f0\u6216\u952e\u5408\u7ebf\u7684\u5fae\u5149\u5b66\u95ee\u9898\u3002<\/p>\n

Key Features<\/h3>\n
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