Silicon Drift Detector (SDD) for High End Applications: Energy resolution at the theoretical limit 高端應(yīng)用：理論極限下的能量分辨率

Silicon Drift Detector (SDD) for High End Applications: Energy resolution at the theoretical limit 高端應(yīng)用：理論極限下的能量分辨率

When ultimate spectral resolution is required, you should choose the highest performance available on the market. Based on our well-proven SDD droplet technology, our SD3plus?detectors use the latest chip-integrated FET design to push the performance towards the physical limits.

基于我們久經(jīng)考驗(yàn)的SDD液滴技術(shù)，我們的SD3plus探測(cè)器使用最新的芯片集成FET設(shè)計(jì)，將性能推向物理極限。

The SD3plus?Detector Performance

  • The ultra-low signal capacitances of the chip-integrated JFET offer?outstanding?low?noise?performance

  • Unmatched energy resolution values down to?121 eV?@ Mn-Kα?and?36 eV?@ C-K

  • The outstanding energy resolution of our detector is especially apparent in?light?element?detection where detector noise plays the largest role

  • Light element detection with superior performance can be achieved if SDDs are used as?windowless detectors?in high vacuum applications

  • Even?Lithium K-line?and?Aluminum L-line?can be well measured

  • The outstanding energy resolutions of the?SD3plus?detectors offer accurate quantitative analysis even for very low energy M- and L-lines and weak signals in low kV electron microscopy

  • The superior? performance at warmer temperatures enables new possibilities for applications with low cooling power consumption; light element detection is possible even at room temperature

SD3plus探測(cè)器性能
芯片集成JFET的超低信號(hào)電容提供了卓越的低噪聲性能
能量分辨率值低至121 eV@Mn-Kα和36 eV@C-K
我們的探測(cè)器卓越的能量分辨率在探測(cè)器噪聲起最大作用的輕元件探測(cè)中尤為明顯
如果在高真空應(yīng)用中使用SDD作為無窗檢測(cè)器，則可以實(shí)現(xiàn)具有優(yōu)異性能的輕元件檢測(cè)
即使是鋰K線和鋁L線也可以很好地測(cè)量
SD3plus探測(cè)器卓越的能量分辨率提供了精確的定量分析，即使是在低千伏電子顯微鏡中對(duì)極低能量的M-和L-線以及弱信號(hào)也是如此
在更高溫度下的卓越性能為低冷卻功耗的應(yīng)用提供了新的可能性；即使在室溫下也可以進(jìn)行光元件檢測(cè)


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