電子束蒸發器EBV 40A1專為超純亞單層和多層MBE薄膜生長而設計。
描述
精確定義的蒸發劑束意味著在樣品上高度均勻的沉積,沉積面積由電子束蒸發器到樣品的距離和易于更換的出口孔之一的選擇決定。電子束蒸發器EBV 40A1配置有手動或自動快門的選擇。自定義插入長度190-345毫米(根據要求提供其他長度)
特性
手動或電動氣動快門,集成通量監測器
W/Th燈絲,用于從棒狀材料或小型導電坩堝中蒸發
多種可更換的出口孔
整體水冷
適用于各種材料
獨特的高可靠性設計
極高的功率密度
極高的功率密度
選項
定制插入長度
有或沒有集成手動/電動氣動快門
線性移位
坩堝
技術參數
Mounting flange | DN 40CF (rotatable) |
Temperature range (for evaporated materials) | 160 °C – 2300 °C (3300 °C for molybdenum connector) |
Filament current | typically 1.8 – 2.2 A, max 2.3 A |
Evaporating rod diameter | 2 mm standard (other on request), step 2 mm, wire feed 25 mm wire length 43 mm |
Water cooling (required) | water flow: > 0.5 l/min., temperature: 20-30 °C, max pressure: 6 bar |
Exit aperture diameters | set 1: ID 4, ID 6, ID 7.4 (standard) set 2: ID 10, ID 14, ID 19 |
Type of shutter | manual or pneumatic |
Power | – 50 W?for high vapor pressure materials – up to?200 W?for crucibles and thick wires |
Energy range | 1 – 1500 eV |
Cathode type | thoriated tungsten |
Crucible type (option) | Knudsen cell type made from: Mo, W, liner PBN, Al2O3 |
Crucibles volume | 0.07 ml |
Evaporated materials | all typical materials according to?crucible type |
Others | – flux regulation via ion current incl. electrode, feedthrough, display unit and PID-regulator – rear-loading evaporant |
Insertion length | min. 190 mm (other on request) OD: 34.8 mm |
Deposition area | dependent on working distance (e.g. 6 mm for distance 25 mm – ID 4, 33 mm for distance 75 mm – ID 19) |
Working distance | 25 – 75 mm (optimum) |
Bakeout temperature | up to?250°C |
Working pressure | <10-5?mbar |