電子束蒸發(fā)器EBV 40A1專為超純亞單層和多層MBE薄膜生長(zhǎng)而設(shè)計(jì)。
描述
精確定義的蒸發(fā)劑束意味著在樣品上高度均勻的沉積，沉積面積由電子束蒸發(fā)器到樣品的距離和易于更換的出口孔之一的選擇決定。電子束蒸發(fā)器EBV 40A1配置有手動(dòng)或自動(dòng)快門的選擇。自定義插入長(zhǎng)度190-345毫米（根據(jù)要求提供其他長(zhǎng)度）
特性
手動(dòng)或電動(dòng)氣動(dòng)快門，集成通量監(jiān)測(cè)器
W/Th燈絲，用于從棒狀材料或小型導(dǎo)電坩堝中蒸發(fā)
多種可更換的出口孔
整體水冷
適用于各種材料
獨(dú)特的高可靠性設(shè)計(jì)
極高的功率密度
極高的功率密度
選項(xiàng)
定制插入長(zhǎng)度
有或沒(méi)有集成手動(dòng)/電動(dòng)氣動(dòng)快門
線性移位
坩堝
技術(shù)參數(shù)
| Mounting flange | DN 40CF (rotatable) |
| Temperature range (for evaporated materials) | 160 °C – 2300 °C (3300 °C for molybdenum connector) |
| Filament current | typically 1.8 – 2.2 A, max 2.3 A |
| Evaporating rod diameter | 2 mm standard (other on request), step 2 mm, wire feed 25 mm wire length 43 mm |
| Water cooling (required) | water flow: > 0.5 l/min., temperature: 20-30 °C, max pressure: 6 bar |
| Exit aperture diameters | set 1: ID 4, ID 6, ID 7.4 (standard) set 2: ID 10, ID 14, ID 19 |
| Type of shutter | manual or pneumatic |
| Power | – 50 W?for high vapor pressure materials – up to?200 W?for crucibles and thick wires |
| Energy range | 1 – 1500 eV |
| Cathode type | thoriated tungsten |
| Crucible type (option) | Knudsen cell type made from: Mo, W, liner PBN, Al2O3 |
| Crucibles volume | 0.07 ml |
| Evaporated materials | all typical materials according to?crucible type |
| Others | – flux regulation via ion current incl. electrode, feedthrough, display unit and PID-regulator – rear-loading evaporant |
| Insertion length | min. 190 mm (other on request) OD: 34.8 mm |
| Deposition area | dependent on working distance (e.g. 6 mm for distance 25 mm – ID 4, 33 mm for distance 75 mm – ID 19) |
| Working distance | 25 – 75 mm (optimum) |
| Bakeout temperature | up to?250°C |
| Working pressure | <10-5?mbar |
