奧地利Roithner Lasertechnik GmbH InGaAs光電二極管/探測器 InGaAs PIN光電二極管、焦平面InGaAs陣列光電二極管

InGaAs光電二極管

InGaAs Photodiodes

InGaAs PIN光電二極管

InGaAs PDs采用TO和SMD封裝

光譜范圍從600納米到2200納米,有效面積直徑可達3毫米

低暗電流、高動態阻抗

貨號光譜范圍有效面積封裝注意
IPD1450-038-5T1.0 – 1.6 μm0.35 x 0.35 mm2TO-181.45 μm peak
IPD1450-038-SMT1.0 – 1.6 μm0.38 x 0.38 mm2SMD1.45 μm peak
PT41130.9 – 1.7 μm? 75 μmTO-46NEW
PT4113B0.9 – 1.7 μm? 75 μmTO-46Ball lensNEW
PT51130.9 – 1.7 μm? 300 μmTO-46
PT5113B0.9 – 1.7 μm? 300 μmTO-46Ball lensNEW
LAPD-05-09-17-TO460.9 – 1.7 μm? 0.5 mmTO-46
LAPD-05-06-17-TO460.6 – 1.7 μm? 0.5 mmTO-46VIS extended range from 600-1700 nmNEW
LAPD-1-09-17-TO460.9 – 1.7 μm? 1 mmTO-46
LAPD-1-06-17-TO460.6 – 1.7 μm? 1 mmTO-46VIS extended range from 600-1700 nm
LAPD-1-12-22-TO461.2 – 2.2 μm? 1 mmTO-46NIR extended range from 1200-2200 nm
LAPD-1-09-17-LCC0.9 – 1.7 μm? 1 mm6CLCC
LAPD-1-06-17-LCC0.6 – 1.7 μm? 1 mm6CLCCVIS extended range from 600-1700 nm
PT7111.0 – 1.65 μm? 2 mmTO-39EOL, stock available
IPD1450-200-SMB1.55 μm peak2 x 2 mm2SMD5.0 x 5.25 x 1.0 mm
LAPD-2-09-17-TO390.9 – 1.7 μm? 1.9 mmTO-39
LAPD-2-06-17-TO390.6 – 1.7 μm? 1.9 mmTO-39VIS extended range from 600-1700 nm
LAPD-2-12-22-TO391.2 – 2.2 μm? 1.9 mmTO-39NIR extended range from 1200-2200 nm
LAPD-2-09-17-LCC0.9 – 1.7 μm? 1.9 mm8CLCC
LAPD-2-06-17-LCC0.6 – 1.7 μm? 1.9 mm8CLCCVIS extended range from 600-1700nm
LAPD-3-09-17-TO390.9 – 1.7 μm? 3 mmTO-39
EPD-1300-3-0.2800 – 1750 nm0.032 mm23 mm epoxyEOL, stock available

焦平面InGaAs陣列光電二極管

二維InGaAs陣列320×256像素,近紅外高靈敏度,
極低噪聲、高動態范圍、室溫工作
波長范圍:900 – 1700納米,像素寬度:30米,響應度0.8安培/瓦,量子效率> 70%

貨號光譜范圍可操作性數組大小封裝注意
FPA320x256-9800.9 -1.7 μm98 %320 x 256 pixel44-pin Ceramic LCC10 MHz, ARC wind.
FPA320x256-9900.9 -1.7 μm99 %320 x 256 pixel44-pin Ceramic LCC10 MHz, ARC wind.
FPA320x256-9990.9 -1.7 μm99.9 %320 x 256 pixel44-pin Ceramic LCC10 MHz, ARC wind.
FPA320x256-1000.9 -1.7 μm>99.95 %320 x 256 pixel44-pin Ceramic LCC10 MHz, ARC wind.

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