Roithner Lasertechnik硅光電二極管、SMD封裝光電二極管
表面貼裝光電二極管,具有出色的響應(yīng)能力和高光電流。
靈敏度范圍:400 – 1100納米,峰值在900納米
Part No. | Active area | φ | Photo current | Rise time | Size | Note | Data sheet |
---|---|---|---|---|---|---|---|
SPD19-C | 0,19 mm2 | 80° | 6 μA | 6 ns | 3 x 2 x 1.1 mm | ||
SPD19-CT | 0,19 mm2 | 80° | 6 μA | 6 ns | 3.5 x 2.7 x 1.8 mm | SMT type | request |
硅PIN光電二極管,具有出色的響應(yīng)能力和高光電流。
靈敏度范圍:400 – 1100納米,峰值在900納米
包裝尺寸:3毫米,5毫米
Part No. | Active area | φ | Photo current | Rise time | Package | Note | Data sheet |
---|---|---|---|---|---|---|---|
SPD19-33 | 0.19 mm2 | 50° | 12 μA | 6 ns | 3 mm | request | |
SPD64-01 | 0.64 mm2 | 30° | 20 μA | 10 ns | 5 mm | request | |
SPD64-02 | 0.64 mm2 | 28° | 20 μA | 10 ns | 5 mm | ||
SPD64-03 | 0.64 mm2 | 40° | 20 μA | 10 ns | 5 mm | request | |
SPD64-04 | 0.64 mm2 | 90° | 20 μA | 10 ns | 5 mm | ||
SPD64-06 | 0.64 mm2 | 24° | 20 μA | 10 ns | 5 mm | request |
TO封裝
硅PIN光電二極管,具有出色的響應(yīng)能力和高光電流。
靈敏度范圍:400 – 1100納米,峰值在900納米
包裝尺寸:至18,至39,至46
Part No. | Active area | φ | Photo current | Rise time | Package | Note | Data sheet |
---|---|---|---|---|---|---|---|
SPD17-0F | 1,69 mm2 | 110° | 25 μA | 10 ns | TO-46 | ||
SPD17-3F | 1,69 mm2 | 30° | 40 μA | 10 ns | TO-46 | request | |
SPD17-5F | 1,69 mm2 | 36° | 14 μA | 10 ns | TO-46 | request | |
SPD17-0T | 1,69 mm2 | 120° | 20 μA | 10 ns | TO-18 | ||
SPD17-3T | 1,69 mm2 | 20° | 55 μA | 10 ns | TO-18 | request | |
SPD17-5T | 1,69 mm2 | 90° | 15 μA | 10 ns | TO-18 | request | |
SPD26-0T | 2,56 mm2 | 120° | 30 μA | 30 ns | TO-18 | request | |
SPD26-3T | 2,56 mm2 | 20° | 45 μA | 30 ns | TO-18 | request | |
SPD26-5T | 2,56 mm2 | 90° | 15 μA | 30 ns | TO-18 | request | |
SPD400-0F | 4 mm2 | 120° | 50 μA | 45 ns | TO-46 | ||
SPD400-3F | 4 mm2 | 60° | 40 μA | 45 ns | TO-46 | request | |
SPD784-0P | 7,84 mm2 | 130° | 100 μA | 50 ns | TO-39 | request | |
SPD784-9P | 7,84 mm2 | 100° | 80 μA | 50 ns | TO-39 | request |
集成跨阻放大器的PDs
集成低噪聲JFET TI放大器、集成反饋電阻和電容的硅PIN光電二極管
非常低的失調(diào)和漂移參數(shù),5V至18V雙電源電壓
工作溫度。:-25-+85°C,符合RoHS和WEEE標(biāo)準(zhǔn)
波長(zhǎng)范圍400-1100納米,光譜響應(yīng)度峰值在850納米
包裝:密封至-5,帶半球形玻璃透鏡或平面玻璃窗(可選).
Part No. | Active area | φ | Transimpendance | Rise time | Bandwidth | Note | Data sheet |
---|---|---|---|---|---|---|---|
IQ800L | 4.8 mm2 | 10° | 100 MOhm | 35 μs | 10 kHz | ||
IQ801L | 4.8 mm2 | 10° | 10 MOhm | 15 μs | 25 kHz | ||
IQ802L | 4.8 mm2 | 10° | 1 MOhm | 3 μs | 120 kHz |
光電晶體管
靈敏度范圍:400 – 1100納米,峰值在900納米
封裝尺寸:貼片,3毫米,5毫米
Part No. | Active area | φ | Photo current | Rise time | Package | Note | Data sheet |
---|---|---|---|---|---|---|---|
SPT36-C | 0,36 mm2 | 80° | 3 mA | 20 μs | SMD | 3 x 2 x 1.1 mm | |
SPT36-05 | 0.36 mm2 | 80° | 4 mA | 20 μs | 5 mm flat epoxy | Peak at 900 nm | request |
SPD36-33 | 0.36 mm2 | 50° | 7 mA | 20 μs | 3 mm epoxy | Peak at 900 nm | request |
SPT64-05 | 0.64 mm2 | 80° | 5 mA | 8 μs | 5 mm flat epoxy | Peak at 900 nm | request |
SPT64-33 | 0.64 mm2 | 50° | 10 mA | 8 μs | 3 mm epoxy | Peak at 900 nm | request |